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Delayed electron–hole recombination in a pseudo-direct semiconductor

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Researchers have discovered that bismuth sulfide exhibits pseudo-direct bandgap characteristics that significantly slow down the recombination of electrons and holes while maintaining strong light absorption properties. This unusual combination of features challenges conventional semiconductor physics, where materials typically must compromise between efficient light absorption and reduced charge carrier recombination. The pseudo-direct nature creates an intermediate state that provides benefits of both direct and indirect bandgap semiconductors.


This finding could lead to more efficient solar cells and optoelectronic devices by enabling materials that both absorb light effectively and maintain separated charges for longer periods, improving energy conversion efficiency. Bismuth sulfide is also composed of earth-abundant, non-toxic elements, making it a promising candidate for sustainable energy technologies.


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Semiconductor 19 articles Explore Concept → Band gap Concept coming soon Electron-hole recombination Concept coming soon

Nature, Published online: 28 October 2026; doi:10.1038/s41586-026-11223-x

Pseudo-direct bandgap character in bismuth sulfide retards bimolecular electron–hole recombination while preserving strong light absorption.

Source: Delayed electron–hole recombination in a pseudo-direct semiconductor