Interdisciplinary

Small bumps on high-voltage cable shields dramatically alter electric fields

How the science connects

Electric fieldsFinite element met…High-voltage direc…

AI Insight

This study investigated how small protrusions on semiconductive shielding layers affect electric field distribution in ±500 kV high-voltage direct current cables using 3D finite element modeling. Researchers found that protrusion height has the most significant impact on electric field distortion, with increases from 50 μm to 300 μm causing the distortion rate to rise from 9.78 to 102.04 under full load conditions. The electric field distortion also correlates positively with the activation energy of insulation materials, increasing by 0.72 for every 0.1 eV increment.


These findings are critical for improving the design and reliability of HVDC cable insulation systems, which are essential infrastructure for long-distance power transmission. Understanding how manufacturing imperfections like protrusions affect electric field distribution can help prevent insulation degradation and extend cable lifespan, potentially reducing maintenance costs and power transmission failures.


Understand the Science

Electric fields Concept coming soon Finite element method Concept coming soon High-voltage direct current Concept coming soon

by Haolun Xu, Wei Wang, Yuanli Lu, Haotian Shi, Zhongyong Zhao, Chao Tang, Gang Lyu, Liang Cao

High-voltage direct current (HVDC) cables demand a high-performance insulation system to ensure the operational reliability. Protrusions located on cable interfaces can cause electric field distortion, resulting in insulation degradation and a reduced lifespan. By using the finite element method, a 3D model was established to explore how protrusions affect the electric field within HVDC cable insulation, considering different sizes and shapes of protrusions, the activation energy of conductivity for insulation materials and the temperature difference across the insulation. The results indicate that under full load conditions, protrusions at the interface between the insulation layer and the semiconductive shielding layer significantly affect the electric field distribution, and the height of the protrusion has a greater impact than the cross-sectional shape and size. By increasing the protrusion height from 50 μm to 300 μm, an increase of electric field distortion rate from 9.78 to 102.04 was observed. Furthermore, the electric field distortion rate near the protrusions exhibits a positive correlation with the activation energy of the insulation material, specifically increasing by 0.72 for every 0.1 eV increment. These findings provide valuable insights for the design and evaluation of HVDC cable insulation.

Source: Influence of semiconductive shielding protrusions on the electric field distribution in ±500 kV HVDC cables