Physics

TeO2-modified SiO2-B2O3-Al2O3 glasses with enhanced dielectric constant and dissipation factor for advanced semiconductor packaging applications

AI Insight

This study investigates the incorporation of TeO2 into SiO2-B2O3-Al2O3 glass systems to modify their dielectric properties. The addition of tellurium dioxide was found to enhance the dielectric constant while influencing the dissipation factor, making these glass compositions potentially suitable for advanced semiconductor packaging. The research characterizes the relationship between TeO2 content and the resulting electrical and structural properties of the glass matrix.


Advanced semiconductor packaging requires materials with precisely tuned dielectric properties to support higher-frequency signal transmission and miniaturization in next-generation electronics. These modified glass compositions could contribute to improved performance in high-density interconnect substrates used in chips for AI, 5G, and high-performance computing.


Source: TeO2-modified SiO2-B2O3-Al2O3 glasses with enhanced dielectric constant and dissipation factor for advanced semiconductor packaging applications